MDS1652ERUH - описание и поиск аналогов

Preliminary Subject to change without notice MDS1652E Single N-channel Trench MOSFET 30V, 16A, 5.0m General Description Features The MDS1652E uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides high performance in on-state I = 16A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. Excelle

MDS1654 Single N-Channel Trench MOSFET 30V, 15A, 9.5m General Description Features The MDS1654 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 15A @VGS = 10V high switching performance and excellent reliability. RDS(ON)

MDS1655 Single N-channel Trench MOSFET 30V, 11A, 17.5m General Description Features The MDS1655 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 11A @VGS = 10V resistance, fast switching performance and excellent R DS(ON) quality. MDS1655 is suitable device for DC-DC

MDS1651 Single N-Channel Trench MOSFET 30V, 11.6A, 17m General Description Features The MDS1651 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 11.6A@VGS = 10V high switching performance and excellent reliability. RDS(ON)

MDS1656 Single N-Channel Trench MOSFET 30V, 7.2A, 28m General Description Features The MDS1656 uses advanced MagnaChip s trench MOSFET VDS = 30V Technology to provide high performance in on-state resistance, I = 7.2A @V = 10V D GS switching performance and reliability RDS(ON)

MDS1653 Single N-Channel Trench MOSFET 30V, 12A, 12m General Description Features The MDS1653 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 12A @VGS = 10V high switching performance and excellent reliability. RDS(ON)