MDS1652ERUH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MDS1652ERUH
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 16 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 4.2 ns
Выходная емкость (Cd): 420 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.005 Ohm
Тип корпуса: SOIC-8
Аналог (замена) для MDS1652ERUH
MDS1652ERUH Datasheet (PDF)
mds1652eruh.pdf
Preliminary Subject to change without notice ` MDS1652E Single N-channel Trench MOSFET 30V, 16A, 5.0m General Description Features The MDS1652E uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides high performance in on-state I = 16A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. Excelle
mds1654urh.pdf
MDS1654 Single N-Channel Trench MOSFET 30V, 15A, 9.5mGeneral Description Features The MDS1654 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 15A @VGS = 10V high switching performance and excellent reliability. RDS(ON)
mds1655urh.pdf
MDS1655 Single N-channel Trench MOSFET 30V, 11A, 17.5m General Description Features The MDS1655 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 11A @VGS = 10V resistance, fast switching performance and excellent R DS(ON) quality. MDS1655 is suitable device for DC-DC
mds1651urh.pdf
MDS1651 Single N-Channel Trench MOSFET 30V, 11.6A, 17mGeneral Description Features The MDS1651 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 11.6A@VGS = 10V high switching performance and excellent reliability. RDS(ON)
mds1656urh.pdf
MDS1656 Single N-Channel Trench MOSFET 30V, 7.2A, 28m General Description Features The MDS1656 uses advanced MagnaChips trench MOSFET VDS = 30V Technology to provide high performance in on-state resistance, I = 7.2A @V = 10V D GSswitching performance and reliability RDS(ON)
mds1653urh.pdf
MDS1653 Single N-Channel Trench MOSFET 30V, 12A, 12mGeneral Description Features The MDS1653 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 12A @VGS = 10V high switching performance and excellent reliability. RDS(ON)
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
