MDS5601URH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDS5601URH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21.3 nS
Cossⓘ - Capacitancia de salida: 204 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de MDS5601URH MOSFET
MDS5601URH Datasheet (PDF)
mds5601urh.pdf
MDS5601 Dual N-channel Trench MOSFET 30V, 12.9A, 10.5mGeneral Description Features The MDS5601 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides high performance in on-state ID = 12.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS5601 is suitable for DC/DC converter and
mds5651urh.pdf
MDS5651Dual N-Channel Trench MOSFET 30V, 7.5A, 26m General Description Features The MDS5651 uses advanced MagnaChips trench MOSFET VDS = 30V Technology to provide high performance in on-state resistance, I = 7.5A @V = 10V D GSswitching performance and reliability RDS(ON)
mds5652urh.pdf
MDS5652 Dual N-Channel Trench MOSFET, 30V, 7.5A, 22m General Description Features The MDS5652 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides low on-state resistance, high I = 7.5A @V = 10V D GSswitching performance and exellent reliability. RDS(ON)
Otros transistores... MDS1951URH , MDS3603URH , MDS3604URH , MDS3651URH , MDS3652URH , MDS3653URH , MDS3753EURH , MDS3754ARH , 2SK3878 , MDS5651URH , MDS5652URH , MDS5951URH , MDU1401SVRH , MDU1402VRH , MDU1511RH , MDU1512RH , MDU1513URH .
History: CPC5603 | CPC3720 | 2SK2534 | CPC3720C | STP100NF04L
History: CPC5603 | CPC3720 | 2SK2534 | CPC3720C | STP100NF04L
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