MDS5601URH MOSFET Datasheet: N-Ch, 30V, 10A. Full specification with pinout and replacement list

MDS5601URH Specs and Replacement

Type Designator: MDS5601URH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21.3 nS

Cossⓘ - Output Capacitance: 204 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: SO-8

MDS5601URH substitution

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MDS5601URH datasheet

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MDS5601 Dual N-channel Trench MOSFET 30V, 12.9A, 10.5m General Description Features The MDS5601 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides high performance in on-state ID = 12.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS5601 is suitable for DC/DC converter and ... See More ⇒

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MDS5651 Dual N-Channel Trench MOSFET 30V, 7.5A, 26m General Description Features The MDS5651 uses advanced MagnaChip s trench MOSFET VDS = 30V Technology to provide high performance in on-state resistance, I = 7.5A @V = 10V D GS switching performance and reliability RDS(ON) ... See More ⇒

9.2. Size:750K magnachip
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MDS5652 Dual N-Channel Trench MOSFET, 30V, 7.5A, 22m General Description Features The MDS5652 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides low on-state resistance, high I = 7.5A @V = 10V D GS switching performance and exellent reliability. RDS(ON) ... See More ⇒

Detailed specifications: MDS1951URH, MDS3603URH, MDS3604URH, MDS3651URH, MDS3652URH, MDS3653URH, MDS3753EURH, MDS3754ARH, 2SK3878, MDS5651URH, MDS5652URH, MDS5951URH, MDU1401SVRH, MDU1402VRH, MDU1511RH, MDU1512RH, MDU1513URH