MDV1526URH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MDV1526URH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3.9 nS
   Cossⓘ - Capacitancia de salida: 139 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: PDFN33

Búsqueda de reemplazo de MOSFET MDV1526URH

MDV1526URH Datasheet (PDF)

..1. Size:854K magnachip
mdv1526urh.pdf

MDV1526 Single N-channel Trench MOSFET 30V, 24A, 11mGeneral Description Features The MDV1526 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 20A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1526 is suitable for DC/DC converter and

8.1. Size:1098K magnachip
mdv1528.pdf

MDV1528 Single N-channel Trench MOSFET 30V, 16A, 18.8m General Description Features The MDV1528 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides high performance in on-state I = 16A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDV1528 is suitable for DC/DC converter and

8.2. Size:851K magnachip
mdv1525urh.pdf

MDV1525 Single N-channel Trench MOSFET 30V, 24A, 10.1mGeneral Description Features The MDV1525 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 24A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1525 is suitable for DC/DC converter and

8.3. Size:1069K magnachip
mdv1529eurh.pdf

MDV1529E Single N-channel Trench MOSFET 30V, 28A, 4.5m General Description Features The MDV1529E uses advanced MagnaChips MOSFET VDS = 32V Technology, which provides high performance in on-state I = 28A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDV1529E is suitable for DC/DC converter and

8.4. Size:852K magnachip
mdv1523urh.pdf

MDV1523 Single N-channel Trench MOSFET 30V, 24A, 6.1mGeneral Description Features The MDV1523 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 24A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1523 is suitable for DC/DC converter and

8.5. Size:850K magnachip
mdv1524urh.pdf

MDV1524 Single N-channel Trench MOSFET 30V, 24A, 8.1mGeneral Description Features The MDV1524 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 24A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1524 is suitable for DC/DC converter and

8.6. Size:850K magnachip
mdv1522urh.pdf

MDV1522 Single N-channel Trench MOSFET 30V, 28A, 4.9mGeneral Description Features The MDV1522 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 28A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1522 is suitable for DC/DC converter and

8.7. Size:856K magnachip
mdv1528urh.pdf

MDV1528 Single N-channel Trench MOSFET 30V, 16A, 18.8mGeneral Description Features The MDV1528 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 16A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1528 is suitable for DC/DC converter and

8.8. Size:855K magnachip
mdv1527urh.pdf

MDV1527 Single N-channel Trench MOSFET 30V, 20A, 15.9mGeneral Description Features The MDV1527 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 20A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1527 is suitable for DC/DC converter and

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