Справочник MOSFET. MDV1526URH

 

MDV1526URH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: MDV1526URH

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 3.4 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 2.7 V

Максимально допустимый постоянный ток стока (Id): 13.2 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 3.9 ns

Выходная емкость (Cd): 139 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.011 Ohm

Тип корпуса: PDFN33

Аналог (замена) для MDV1526URH

 

 

MDV1526URH Datasheet (PDF)

1.1. mdv1526urh.pdf Size:854K _magnachip

MDV1526URH
MDV1526URH

 MDV1526 Single N-channel Trench MOSFET 30V, 24A, 11mΩ General Description Features The MDV1526 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 20A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1526 is suitable for DC/DC converter and < 11.0mΩ @V = 10V GS general purpose applicati

4.1. mdv1528.pdf Size:1098K _update

MDV1526URH
MDV1526URH

 MDV1528 Single N-channel Trench MOSFET 30V, 16A, 18.8mΩ General Description Features The MDV1528 uses advanced MagnaChip’s MOSFET  VDS = 30V Technology, which provides high performance in on-state  I = 16A @V = 10V D GS resistance, fast switching performance and excellent  R DS(ON) quality. MDV1528 is suitable for DC/DC converter and < 18.8mΩ @V = 10V GS general

4.2. mdv1522urh.pdf Size:850K _magnachip

MDV1526URH
MDV1526URH

 MDV1522 Single N-channel Trench MOSFET 30V, 28A, 4.9mΩ General Description Features The MDV1522 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 28A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1522 is suitable for DC/DC converter and < 4.9mΩ @V = 10V GS general purpose applicati

 4.3. mdv1524urh.pdf Size:850K _magnachip

MDV1526URH
MDV1526URH

 MDV1524 Single N-channel Trench MOSFET 30V, 24A, 8.1mΩ General Description Features The MDV1524 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 24A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1524 is suitable for DC/DC converter and < 8.1mΩ @V = 10V GS general purpose applicati

4.4. mdv1527urh.pdf Size:855K _magnachip

MDV1526URH
MDV1526URH

 MDV1527 Single N-channel Trench MOSFET 30V, 20A, 15.9mΩ General Description Features The MDV1527 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 20A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1527 is suitable for DC/DC converter and < 15.9mΩ @V = 10V GS general purpose applica

 4.5. mdv1525urh.pdf Size:851K _magnachip

MDV1526URH
MDV1526URH

 MDV1525 Single N-channel Trench MOSFET 30V, 24A, 10.1mΩ General Description Features The MDV1525 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 24A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1525 is suitable for DC/DC converter and < 10.1mΩ @V = 10V GS general purpose applica

4.6. mdv1528urh.pdf Size:856K _magnachip

MDV1526URH
MDV1526URH

 MDV1528 Single N-channel Trench MOSFET 30V, 16A, 18.8mΩ General Description Features The MDV1528 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 16A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1528 is suitable for DC/DC converter and < 18.8mΩ @V = 10V GS general purpose applica

4.7. mdv1523urh.pdf Size:852K _magnachip

MDV1526URH
MDV1526URH

 MDV1523 Single N-channel Trench MOSFET 30V, 24A, 6.1mΩ General Description Features The MDV1523 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 24A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1523 is suitable for DC/DC converter and < 6.1mΩ @V = 10V GS general purpose applicati

4.8. mdv1529eurh.pdf Size:1069K _magnachip

MDV1526URH
MDV1526URH

 MDV1529E Single N-channel Trench MOSFET 30V, 28A, 4.5mΩ General Description Features The MDV1529E uses advanced MagnaChip’s MOSFET  VDS = 32V Technology, which provides high performance in on-state  I = 28A @V = 10V D GS resistance, fast switching performance and excellent  R DS(ON) quality. MDV1529E is suitable for DC/DC converter and < 4.5mΩ @V = 10V GS general

Другие MOSFET... IRFPS38N60L , IRFPS38N60LPBF , IRFPS40N50L , IRFPS40N50LPBF , IRFPS40N60K , IRFPS40N60KPBF , IRFPS43N50K , IRFPS43N50KPBF , 2SK170 , IRFR15N20DPBF , IRFR18N15DPBF , IRFR1N60APBF , IRFR210PBF , IRFR214PBF , IRFR220BTM_FP001 , IRFR220NPBF , IRFR220PBF .

 

 

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MOSFET: CS5210PBF | CS5210 | CS520 | CS5103 | CS50N80 | CS50N06D | CS50N06 | CS4N70FA9D | CS4N70ARHD | CS4N65F | CS4N65A8HD | CS4N65A4TDY | CS4N65A4HDY | CS4N65A3TDY | CS4N65A3HDY |
 

 

 

 

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