MDV1526URH
MOSFET. Datasheet pdf. Equivalent
Type Designator: MDV1526URH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7
V
|Id|ⓘ - Maximum Drain Current: 13.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 3.9
nS
Cossⓘ -
Output Capacitance: 139
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011
Ohm
Package:
PDFN33
MDV1526URH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDV1526URH
Datasheet (PDF)
..1. Size:854K magnachip
mdv1526urh.pdf 
MDV1526 Single N-channel Trench MOSFET 30V, 24A, 11mGeneral Description Features The MDV1526 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 20A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1526 is suitable for DC/DC converter and
8.1. Size:1098K magnachip
mdv1528.pdf
MDV1528 Single N-channel Trench MOSFET 30V, 16A, 18.8m General Description Features The MDV1528 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides high performance in on-state I = 16A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDV1528 is suitable for DC/DC converter and
8.2. Size:851K magnachip
mdv1525urh.pdf
MDV1525 Single N-channel Trench MOSFET 30V, 24A, 10.1mGeneral Description Features The MDV1525 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 24A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1525 is suitable for DC/DC converter and
8.3. Size:1069K magnachip
mdv1529eurh.pdf
MDV1529E Single N-channel Trench MOSFET 30V, 28A, 4.5m General Description Features The MDV1529E uses advanced MagnaChips MOSFET VDS = 32V Technology, which provides high performance in on-state I = 28A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDV1529E is suitable for DC/DC converter and
8.4. Size:852K magnachip
mdv1523urh.pdf
MDV1523 Single N-channel Trench MOSFET 30V, 24A, 6.1mGeneral Description Features The MDV1523 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 24A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1523 is suitable for DC/DC converter and
8.5. Size:850K magnachip
mdv1524urh.pdf
MDV1524 Single N-channel Trench MOSFET 30V, 24A, 8.1mGeneral Description Features The MDV1524 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 24A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1524 is suitable for DC/DC converter and
8.6. Size:850K magnachip
mdv1522urh.pdf
MDV1522 Single N-channel Trench MOSFET 30V, 28A, 4.9mGeneral Description Features The MDV1522 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 28A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1522 is suitable for DC/DC converter and
8.7. Size:856K magnachip
mdv1528urh.pdf
MDV1528 Single N-channel Trench MOSFET 30V, 16A, 18.8mGeneral Description Features The MDV1528 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 16A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1528 is suitable for DC/DC converter and
8.8. Size:855K magnachip
mdv1527urh.pdf
MDV1527 Single N-channel Trench MOSFET 30V, 20A, 15.9mGeneral Description Features The MDV1527 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 20A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1527 is suitable for DC/DC converter and
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