FQP16N25C Todos los transistores

 

FQP16N25C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQP16N25C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 139 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 130 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
   Paquete / Cubierta: TO-220
 

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FQP16N25C datasheet

 ..1. Size:1162K  fairchild semi
 fqp16n25c fqpf16n25c.pdf pdf_icon

FQP16N25C

QFET FQP16N25C/FQPF16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar stripe, DMOS technology. Low Crss ( typical 68 pF) This advanced technology has been especially tailore

 ..2. Size:260K  inchange semiconductor
 fqp16n25c.pdf pdf_icon

FQP16N25C

isc N-Channel MOSFET Transistor FQP16N25C FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

 6.1. Size:736K  fairchild semi
 fqp16n25.pdf pdf_icon

FQP16N25C

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 250V, RDS(on) = 0.23 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been esp

 8.1. Size:721K  fairchild semi
 fqp16n15.pdf pdf_icon

FQP16N25C

April 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16.4A, 150V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 23 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been

MOSTRAR MÁS

Otros transistores... MDV3604URH , MDV3605URH , MDV5524URH , MDZ1N60UMH , 2SK3979 , 2SK4118LS , CEP50N06 , CEB50N06 , AO3400A , HY1607P , ME15N10 , MMD50R380P , PDC4801R , PMF250XN , TK10A60W , MSD20N06 , MSD20N10 .

History: NCE1012E | FS50VS-3

 

 
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