FQP16N25C Todos los transistores

 

FQP16N25C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQP16N25C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 139 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 15.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 130 nS

Conductancia de drenaje-sustrato (Cd): 170 pF

Resistencia drenaje-fuente RDS(on): 0.27 Ohm

Empaquetado / Estuche: TO-220

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FQP16N25C Datasheet (PDF)

1.1. fqp16n25c fqpf16n25c.pdf Size:1162K _fairchild_semi

FQP16N25C
FQP16N25C

QFET FQP16N25C/FQPF16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 250V, RDS(on) = 0.27? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC) planar stripe, DMOS technology. Low Crss ( typical 68 pF) This advanced technology has been especially tailored to Fast s

2.1. fqp16n25.pdf Size:736K _fairchild_semi

FQP16N25C
FQP16N25C

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 250V, RDS(on) = 0.23? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailo

 4.1. fqp16n15.pdf Size:721K _fairchild_semi

FQP16N25C
FQP16N25C

April 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 16.4A, 150V, RDS(on) = 0.16Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 23 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been

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