FQP16N25C - аналоги, параметры транзистора - Справочник транзисторов

FQP16N25C даташит

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QFET FQP16N25C/FQPF16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar stripe, DMOS technology. Low Crss ( typical 68 pF) This advanced technology has been especially tailore

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isc N-Channel MOSFET Transistor FQP16N25C FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

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May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 250V, RDS(on) = 0.23 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been esp

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April 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16.4A, 150V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 23 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been

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