FQP16N25C Datasheet. Specs and Replacement

Type Designator: FQP16N25C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO-220

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FQP16N25C datasheet

 ..1. Size:1162K  fairchild semi
 fqp16n25c fqpf16n25c.pdf pdf_icon

FQP16N25C

QFET FQP16N25C/FQPF16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar stripe, DMOS technology. Low Crss ( typical 68 pF) This advanced technology has been especially tailore... See More ⇒

 ..2. Size:260K  inchange semiconductor
 fqp16n25c.pdf pdf_icon

FQP16N25C

isc N-Channel MOSFET Transistor FQP16N25C FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒

 6.1. Size:736K  fairchild semi
 fqp16n25.pdf pdf_icon

FQP16N25C

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 250V, RDS(on) = 0.23 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been esp... See More ⇒

 8.1. Size:721K  fairchild semi
 fqp16n15.pdf pdf_icon

FQP16N25C

April 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16.4A, 150V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 23 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been... See More ⇒

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Detailed specifications: MDV3604URH, MDV3605URH, MDV5524URH, MDZ1N60UMH, 2SK3979, 2SK4118LS, CEP50N06, CEB50N06, 60N06, HY1607P, ME15N10, MMD50R380P, PDC4801R, PMF250XN, TK10A60W, MSD20N06, MSD20N10

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