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MSD4N70 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSD4N70
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
   Paquete / Cubierta: TO-252
 

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MSD4N70 Datasheet (PDF)

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MSD4N70

MSD4N70 700V N-Channel MOSFET Description The MSD4N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test

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 msd4n60.pdf pdf_icon

MSD4N70

MSD4N60 600V N-Channel MOSFET Description The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requireme

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 msd4n40.pdf pdf_icon

MSD4N70

MSD4N40 400V N-Channel MOSFET Description The MSD4N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test

Otros transistores... MSD23N58 , MSD2N60 , MSD2N70 , MSD30N06 , MSD30P06 , MSD40P03 , MSD4N40 , MSD4N60 , AO4468 , MSD50N03 , MSD50N10 , MSD80N03 , MSE20N06N , MSF10N40 , MSF10N60 , MSF10N65 , MSF10N80 .

History: AS4435S

 

 
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