MSD4N70 PDF and Equivalents Search

 

MSD4N70 Specs and Replacement

Type Designator: MSD4N70

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO-252

MSD4N70 substitution

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MSD4N70 datasheet

 ..1. Size:875K  bruckewell
 msd4n70.pdf pdf_icon

MSD4N70

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 9.1. Size:824K  bruckewell
 msd4n60.pdf pdf_icon

MSD4N70

MSD4N60 600V N-Channel MOSFET Description The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requireme... See More ⇒

 9.2. Size:937K  bruckewell
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MSD4N70

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Detailed specifications: MSD23N58, MSD2N60, MSD2N70, MSD30N06, MSD30P06, MSD40P03, MSD4N40, MSD4N60, 60N06, MSD50N03, MSD50N10, MSD80N03, MSE20N06N, MSF10N40, MSF10N60, MSF10N65, MSF10N80

Keywords - MSD4N70 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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