MSF10N80A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSF10N80A 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 130 nS
Cossⓘ - Capacitancia de salida: 180 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Encapsulados: TO-220F
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MSF10N80A datasheet
msf10n80a.pdf
MSF10N80A 800V N-Channel MOSFET Description The MSF10N80A is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Int
msf10n80.pdf
MSF10N80 800V N-Channel MOSFET Description The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Techn
mmsf10n02z.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF10N02Z/D Designer's Data Sheet MMSF10N02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel with Monolithic Zener ESD SINGLE TMOS Protected Gate POWER MOSFET EZFETs are an advanced series of power MOSFETs which 10 AMPERES utilize Motorola s High Cell Density HDTMOS process a
mmsf10n03z.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF10N03Z/D Advance Information MMSF10N03Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel with Monolithic Zener ESD Protected Gate SINGLE TMOS POWER MOSFET EZFETs are an advanced series of power MOSFETs which utilize 10 AMPERES Motorola s High Cell Density TMOS process and conta
Otros transistores... MSD50N03, MSD50N10, MSD80N03, MSE20N06N, MSF10N40, MSF10N60, MSF10N65, MSF10N80, IRF540N, MSF12N60, MSF12N65, MSF13N50, MSF14N60, MSF15N60, MSF16N50, MSF18N50, MSF20N50
History: AP04N70BI-HF
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