All MOSFET. MSF10N80A Datasheet

 

MSF10N80A MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSF10N80A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 60 W
   Maximum Drain-Source Voltage |Vds|: 800 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
   Maximum Drain Current |Id|: 10 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 130 nS
   Drain-Source Capacitance (Cd): 180 pF
   Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
   Package: TO-220F

 MSF10N80A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSF10N80A Datasheet (PDF)

 ..1. Size:1058K  bruckewell
msf10n80a.pdf

MSF10N80A
MSF10N80A

MSF10N80A 800V N-Channel MOSFET Description The MSF10N80A is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Int

 6.1. Size:841K  bruckewell
msf10n80.pdf

MSF10N80A
MSF10N80A

MSF10N80 800V N-Channel MOSFET Description The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Techn

 8.1. Size:189K  motorola
mmsf10n02z.pdf

MSF10N80A
MSF10N80A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF10N02Z/DDesigner's Data SheetMMSF10N02ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel

 8.2. Size:201K  motorola
mmsf10n03z.pdf

MSF10N80A
MSF10N80A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF10N03Z/DAdvance InformationMMSF10N03ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel wi

 8.3. Size:184K  motorola
mmsf10n02zrev2.pdf

MSF10N80A
MSF10N80A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF10N02Z/DDesigner's Data SheetMMSF10N02ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel

 8.4. Size:196K  motorola
mmsf10n03zrev0.pdf

MSF10N80A
MSF10N80A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF10N03Z/DAdvance InformationMMSF10N03ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel wi

 8.5. Size:1078K  bruckewell
msf10n65.pdf

MSF10N80A
MSF10N80A

MSF10N65 650V N-Channel MOSFET Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requir

 8.6. Size:1096K  bruckewell
msf10n40.pdf

MSF10N80A
MSF10N80A

MSF10N40 400V N-Channel MOSFET Description The MSF10N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intri

 8.7. Size:907K  bruckewell
msf10n60.pdf

MSF10N80A
MSF10N80A

MSF10N60 N-Channel 600V MOSFET Description The MSF10N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The ITO-220AB package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requ

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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