MSF10N80A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MSF10N80A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 130 ns
Cossⓘ - Выходная емкость: 180 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: TO-220F
Аналог (замена) для MSF10N80A
MSF10N80A Datasheet (PDF)
msf10n80a.pdf

MSF10N80A 800V N-Channel MOSFET Description The MSF10N80A is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Int
msf10n80.pdf

MSF10N80 800V N-Channel MOSFET Description The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Techn
mmsf10n02z.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF10N02Z/DDesigner's Data SheetMMSF10N02ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel withMonolithic Zener ESDSINGLE TMOSProtected GatePOWER MOSFETEZFETs are an advanced series of power MOSFETs which10 AMPERESutilize Motorolas High Cell Density HDTMOS process a
mmsf10n03z.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF10N03Z/DAdvance InformationMMSF10N03ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel withMonolithic Zener ESD Protected GateSINGLE TMOSPOWER MOSFETEZFETs are an advanced series of power MOSFETs which utilize10 AMPERESMotorolas High Cell Density TMOS process and conta
Другие MOSFET... MSD50N03 , MSD50N10 , MSD80N03 , MSE20N06N , MSF10N40 , MSF10N60 , MSF10N65 , MSF10N80 , IRF540 , MSF12N60 , MSF12N65 , MSF13N50 , MSF14N60 , MSF15N60 , MSF16N50 , MSF18N50 , MSF20N50 .
History: BRB4N60 | IXTT30N50P | IRFP9233 | RHU003N03FRA | CSD17303Q5 | VBM1310 | 2SK3847B
History: BRB4N60 | IXTT30N50P | IRFP9233 | RHU003N03FRA | CSD17303Q5 | VBM1310 | 2SK3847B



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