MSF4N60 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MSF4N60  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO-220F

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MSF4N60 datasheet

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MSF4N60

MSF4N60 MSF4N60 600V N-Channel MOSFET General Description The MSF4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl

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MSF4N60

MSF4N60L 600V N-Channel MOSFET Description The MSF4N60L is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requir

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 msf4n65.pdf pdf_icon

MSF4N60

MSF4N65 650V N-Channel MOSFET Description The MSF4N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test

 9.1. Size:244K  motorola
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MSF4N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF4N01HD/D Designer's Data Sheet MMSF4N01HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors TMOS MOSFET MiniMOS devices are an advanced series of power MOSFETs 5.8 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 20 VOLTS These mi

MOSTRAR MÁS

Otros transistores... MSF15N60, MSF16N50, MSF18N50, MSF20N50, MSF2N40, MSF2N60, MSF2N70, MSF3N80, IRF3710, MSF4N60L, MSF4N65, MSF5N50, MSF5N60, MSF6N40, MSF6N60, MSF6N65, MSF6N70