MSF4N60 Datasheet. Specs and Replacement

Type Designator: MSF4N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-220F

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MSF4N60 datasheet

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MSF4N60

MSF4N60 MSF4N60 600V N-Channel MOSFET General Description The MSF4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl... See More ⇒

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MSF4N60

MSF4N60L 600V N-Channel MOSFET Description The MSF4N60L is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requir... See More ⇒

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MSF4N60

MSF4N65 650V N-Channel MOSFET Description The MSF4N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test ... See More ⇒

 9.1. Size:244K  motorola
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MSF4N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF4N01HD/D Designer's Data Sheet MMSF4N01HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors TMOS MOSFET MiniMOS devices are an advanced series of power MOSFETs 5.8 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 20 VOLTS These mi... See More ⇒

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Detailed specifications: MSF15N60, MSF16N50, MSF18N50, MSF20N50, MSF2N40, MSF2N60, MSF2N70, MSF3N80, IRF3710, MSF4N60L, MSF4N65, MSF5N50, MSF5N60, MSF6N40, MSF6N60, MSF6N65, MSF6N70

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