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MSF4N60L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSF4N60L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 121.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO-220F
 

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MSF4N60L Datasheet (PDF)

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MSF4N60L

MSF4N60L 600V N-Channel MOSFET Description The MSF4N60L is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requir

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MSF4N60L

MSF4N60 MSF4N60 600V N-Channel MOSFET General Description The MSF4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl

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MSF4N60L

MSF4N65 650V N-Channel MOSFET Description The MSF4N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test

 9.1. Size:244K  motorola
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MSF4N60L

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF4N01HD/DDesigner's Data SheetMMSF4N01HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsTMOS MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.8 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 VOLTSThese mi

MOSTRAR MÁS

Otros transistores... MSF16N50 , MSF18N50 , MSF20N50 , MSF2N40 , MSF2N60 , MSF2N70 , MSF3N80 , MSF4N60 , IRFB4227 , MSF4N65 , MSF5N50 , MSF5N60 , MSF6N40 , MSF6N60 , MSF6N65 , MSF6N70 , MSF6N90 .

History: 2SK1969-01 | FKP253 | PTF8N65 | BRCS120N03DP | PZ5203QV | HTD2K1P10 | 2SK4212-ZK

 

 
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