All MOSFET. MSF4N60L Datasheet

 

MSF4N60L Datasheet and Replacement


   Type Designator: MSF4N60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 121.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220F
 

 MSF4N60L substitution

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MSF4N60L Datasheet (PDF)

 ..1. Size:992K  bruckewell
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MSF4N60L

MSF4N60L 600V N-Channel MOSFET Description The MSF4N60L is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requir

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MSF4N60L

MSF4N60 MSF4N60 600V N-Channel MOSFET General Description The MSF4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl

 8.1. Size:1173K  bruckewell
 msf4n65.pdf pdf_icon

MSF4N60L

MSF4N65 650V N-Channel MOSFET Description The MSF4N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test

 9.1. Size:244K  motorola
 mmsf4n01hd.pdf pdf_icon

MSF4N60L

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF4N01HD/DDesigner's Data SheetMMSF4N01HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsTMOS MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.8 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 VOLTSThese mi

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Datasheet: MSF16N50 , MSF18N50 , MSF20N50 , MSF2N40 , MSF2N60 , MSF2N70 , MSF3N80 , MSF4N60 , 10N60 , MSF4N65 , MSF5N50 , MSF5N60 , MSF6N40 , MSF6N60 , MSF6N65 , MSF6N70 , MSF6N90 .

History: IRFP4110PBF | FQPF12P20YDTU | NTH4L040N65S3F | NTHD4P02F

Keywords - MSF4N60L MOSFET datasheet

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