MSF5N50 Todos los transistores

 

MSF5N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSF5N50
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO-220F
 

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MSF5N50 Datasheet (PDF)

 ..1. Size:900K  bruckewell
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MSF5N50

MSF5N50 500V N-Channel MOSFET Description The MSF5N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem

 9.1. Size:252K  motorola
mmsf5n02hd.pdf pdf_icon

MSF5N50

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N02HD/DDesigner's Data SheetMMSF5N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V

 9.2. Size:253K  motorola
mmsf5n03hd.pdf pdf_icon

MSF5N50

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N03HD/DDesigner's Data SheetMMSF5N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 30 V

 9.3. Size:293K  motorola
mmsf5n02hdrev5.pdf pdf_icon

MSF5N50

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N02HD/DDesigner's Data SheetMMSF5N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V

Otros transistores... MSF20N50 , MSF2N40 , MSF2N60 , MSF2N70 , MSF3N80 , MSF4N60 , MSF4N60L , MSF4N65 , IRFP250N , MSF5N60 , MSF6N40 , MSF6N60 , MSF6N65 , MSF6N70 , MSF6N90 , MSF7N60 , MSF7N65 .

History: VBJ1695 | TK14A65W5 | 2SK2049 | 2N7002CSM | STS12NF30L | AP6941GMT-HF | 2SK2550

 

 
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