MSF5N50
MOSFET. Datasheet pdf. Equivalent
Type Designator: MSF5N50
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 38
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 80
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5
Ohm
Package:
TO-220F
MSF5N50
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MSF5N50
Datasheet (PDF)
..1. Size:900K bruckewell
msf5n50.pdf 
MSF5N50 500V N-Channel MOSFET Description The MSF5N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem
9.1. Size:252K motorola
mmsf5n02hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N02HD/DDesigner's Data SheetMMSF5N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V
9.2. Size:253K motorola
mmsf5n03hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N03HD/DDesigner's Data SheetMMSF5N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 30 V
9.3. Size:293K motorola
mmsf5n02hdrev5.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N02HD/DDesigner's Data SheetMMSF5N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V
9.4. Size:294K motorola
mmsf5n03hdrev5.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N03HD/DDesigner's Data SheetMMSF5N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 30 V
9.5. Size:282K motorola
mmsf5n03z.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N03Z/DAdvance InformationMMSF5N03ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel withMonolithic Zener ESDSINGLE TMOSProtected GatePOWER MOSFETEZFETs are an advanced series of power MOSFETs which utilize 5.0 AMPERESMotorolas High Cell Density TMOS process and cont
9.6. Size:862K bruckewell
msf5n60.pdf
MSF5N60 N-Channel Enhancement Mode Power MOSFET Description The MSF5N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim
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