MSF6N60 Todos los transistores

 

MSF6N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSF6N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12.2 nS
   Cossⓘ - Capacitancia de salida: 86 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
   Paquete / Cubierta: TO-220F
 

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MSF6N60 Datasheet (PDF)

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MSF6N60

MSF6N60 N-Channel Enhancement Mode Power MOSFET Description The MSF6N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

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 msf6n65.pdf pdf_icon

MSF6N60

MSF6N65 N-Channel Enhancement Mode Power MOSFET Description The MSF6N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

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 msf6n90.pdf pdf_icon

MSF6N60

MSF6N90 900V N-Channel MOSFET Description The MS15N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The ITO-220 package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 2.4 )@VGS=10V Gate Charg

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 msf6n70.pdf pdf_icon

MSF6N60

MSF6N70 700V N-Channel MOSFET Description The MSF6N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem

MOSTRAR MÁS

Otros transistores... MSF2N70 , MSF3N80 , MSF4N60 , MSF4N60L , MSF4N65 , MSF5N50 , MSF5N60 , MSF6N40 , 2SK3878 , MSF6N65 , MSF6N70 , MSF6N90 , MSF7N60 , MSF7N65 , MSF7N80 , MSF8N50 , MSF8N60 .

History: 1N65L-TF3-T | APT6015LVFRG | SI3401 | APT34F100B2 | AP3P090N | 4N80 | BF1210

 

 
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