All MOSFET. MSF6N60 Datasheet

 

MSF6N60 Datasheet and Replacement


   Type Designator: MSF6N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12.2 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO-220F
 

 MSF6N60 substitution

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MSF6N60 Datasheet (PDF)

 ..1. Size:848K  bruckewell
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MSF6N60

MSF6N60 N-Channel Enhancement Mode Power MOSFET Description The MSF6N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

 8.1. Size:427K  bruckewell
msf6n65.pdf pdf_icon

MSF6N60

MSF6N65 N-Channel Enhancement Mode Power MOSFET Description The MSF6N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

 9.1. Size:1096K  bruckewell
msf6n90.pdf pdf_icon

MSF6N60

MSF6N90 900V N-Channel MOSFET Description The MS15N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The ITO-220 package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 2.4 )@VGS=10V Gate Charg

 9.2. Size:813K  bruckewell
msf6n70.pdf pdf_icon

MSF6N60

MSF6N70 700V N-Channel MOSFET Description The MSF6N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem

Datasheet: MSF2N70 , MSF3N80 , MSF4N60 , MSF4N60L , MSF4N65 , MSF5N50 , MSF5N60 , MSF6N40 , 2SK3878 , MSF6N65 , MSF6N70 , MSF6N90 , MSF7N60 , MSF7N65 , MSF7N80 , MSF8N50 , MSF8N60 .

History: SHD225503 | AP6928GMT-HF | AP4800DGM-HF | QM3010J | SRC60R950E | FDV302PD87Z | ELM14354AA

Keywords - MSF6N60 MOSFET datasheet

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