MSW20N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSW20N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 320 W
Tensión drenaje-fuente |Vds|: 600 V
Tensión compuerta-fuente |Vgs|: 30 V
Corriente continua de drenaje |Id|: 20 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 4 V
Tiempo de elevación (tr): 200 nS
Conductancia de drenaje-sustrato (Cd): 410 pF
Resistencia drenaje-fuente RDS(on): 0.32 Ohm
Empaquetado / Estuche: TO-3P TO-247
Búsqueda de reemplazo de MOSFET MSW20N60
MSW20N60 Datasheet (PDF)
0.1. msw20n60.pdf 
Size:453K _bruckewell
Preliminary MSW20N60 500V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (Typical 0.26 )@VGS=10V Gate Charge (Typical 80nC) Improved dv/dt Capability, High
8.1. msw20n50.pdf Size:823K _bruckewell
MSW20N50 500V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (Typical 0.26 )@VGS=10V Gate Charge (Typical 90nC) Improved dv/dt Capability, High Ruggedness
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
