MSW20N60 Todos los transistores

 

MSW20N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MSW20N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 320 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 200 nS

Conductancia de drenaje-sustrato (Cd): 410 pF

Resistencia drenaje-fuente RDS(on): 0.32 Ohm

Empaquetado / Estuche: TO-3P_TO-247

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MSW20N60 Datasheet (PDF)

1.1. msw20n60.pdf Size:453K _upd-mosfet

MSW20N60
MSW20N60

Preliminary MSW20N60 500V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features • RDS(on) (Typical 0.26Ω )@VGS=10V • Gate Charge (Typical 80nC) • Improved dv/dt Capability, High

4.1. msw20n50.pdf Size:823K _upd-mosfet

MSW20N60
MSW20N60

MSW20N50 500V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features • RDS(on) (Typical 0.26Ω )@VGS=10V • Gate Charge (Typical 90nC) • Improved dv/dt Capability, High Ruggedness

 

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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