MSW20N60 Todos los transistores

 

MSW20N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MSW20N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 320 W

Tensión drenaje-fuente |Vds|: 600 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Tiempo de elevación (tr): 200 nS

Conductancia de drenaje-sustrato (Cd): 410 pF

Resistencia drenaje-fuente RDS(on): 0.32 Ohm

Empaquetado / Estuche: TO-3P TO-247

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MSW20N60 Datasheet (PDF)

0.1. msw20n60.pdf Size:453K _bruckewell

MSW20N60
MSW20N60

Preliminary MSW20N60 500V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (Typical 0.26 )@VGS=10V Gate Charge (Typical 80nC) Improved dv/dt Capability, High

8.1. msw20n50.pdf Size:823K _bruckewell

MSW20N60
MSW20N60

MSW20N50 500V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (Typical 0.26 )@VGS=10V Gate Charge (Typical 90nC) Improved dv/dt Capability, High Ruggedness

 

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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MOSFET: HSW8810 | HSW8205 | HSW6811 | HSW6800 | HSW6604 | HSW4602 | HSW3415 | HSW2N15 | HSU90N03 | HSU90N02 | HSU80N03 | HSU70P06 | HSU6903 | HSU6901 | HSU6115 | HSU6113

 

 

 
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