All MOSFET. MSW20N60 Datasheet

 

MSW20N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: MSW20N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 320 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 200 nS

Drain-Source Capacitance (Cd): 410 pF

Maximum Drain-Source On-State Resistance (Rds): 0.32 Ohm

Package: TO-3P TO-247

MSW20N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSW20N60 Datasheet (PDF)

0.1. msw20n60.pdf Size:453K _bruckewell

MSW20N60
MSW20N60

Preliminary MSW20N60 500V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (Typical 0.26 )@VGS=10V Gate Charge (Typical 80nC) Improved dv/dt Capability, High

8.1. msw20n50.pdf Size:823K _bruckewell

MSW20N60
MSW20N60

MSW20N50 500V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (Typical 0.26 )@VGS=10V Gate Charge (Typical 90nC) Improved dv/dt Capability, High Ruggedness

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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