All MOSFET. MSW20N60 Datasheet

 

MSW20N60 Datasheet and Replacement


   Type Designator: MSW20N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 320 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO-3P TO-247
 

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MSW20N60 Datasheet (PDF)

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MSW20N60

Preliminary MSW20N60 500V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (Typical 0.26 )@VGS=10V Gate Charge (Typical 80nC) Improved dv/dt Capability, High

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MSW20N60

MSW20N50 500V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (Typical 0.26 )@VGS=10V Gate Charge (Typical 90nC) Improved dv/dt Capability, High Ruggedness

Datasheet: MSU7N60F , MSU7N60T , MSU8N50Q , MSU9N90P , MSW10N80 , MSW11N90 , MSW16N50 , MSW20N50 , AO4468 , MSW9N90 , MTA090N02KC3 , MTA340N02KC3 , MTA55N20J3 , MTB070P15J3 , MTB080N15J3 , MTB09P03E3 , MTB09P04DJ3 .

History: IRFU110P | CS730FA9H

Keywords - MSW20N60 MOSFET datasheet

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