MTB23P06VT4 Todos los transistores

 

MTB23P06VT4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTB23P06VT4
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 98.3 nS
   Cossⓘ - Capacitancia de salida: 380 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: D2PAK
 

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MTB23P06VT4 Datasheet (PDF)

 ..1. Size:97K  onsemi
 mtb23p06vt4.pdf pdf_icon

MTB23P06VT4

MTB23P06VPreferred DevicePower MOSFET23 Amps, 60 VoltsPChannel D2PAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highhttp://onsemi.comspeed switching applications in power supplies, converters and powermotor controls, these devices are particularly well suited for bridge23 AMPEREScircuits where d

 5.1. Size:249K  motorola
 mtb23p06vrev1x.pdf pdf_icon

MTB23P06VT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06V/DDesigner's Data SheetMTB23P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.120 OHMtance area product abou

 5.2. Size:217K  motorola
 mtb23p06v.pdf pdf_icon

MTB23P06VT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06V/DDesigner's Data SheetMTB23P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.120 OHMtance area product abou

 6.1. Size:242K  motorola
 mtb23p06e.pdf pdf_icon

MTB23P06VT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06E/DDesigner's Data SheetMTB23P06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.12 OHMthan any existing surface mo

MOSTRAR MÁS

Otros transistores... MTB070P15J3 , MTB080N15J3 , MTB09P03E3 , MTB09P04DJ3 , MTB110P10L3 , MTB160N25J3 , MTB20A06Q8 , MTB20N04J3 , IRFZ44 , MTB25C04Q8 , MTB2D5N03BH8 , MTB2P50ET4G , MTB300N10L3 , MTB30P06VT4 , MTB30P06VT4G , MTB3D0N03BH8 , MTB50P03HDLG .

History: SSF7NS70UG | FDB86363-F085 | IPN80R1K2P7 | WPM3005 | RD3L080SN | KIA4N60H-220F | SFG150N10KF

 

 
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