MTB23P06VT4 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB23P06VT4  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 90 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 98.3 nS

Cossⓘ - Capacitancia de salida: 380 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm

Encapsulados: D2PAK

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MTB23P06VT4 datasheet

 ..1. Size:97K  onsemi
 mtb23p06vt4.pdf pdf_icon

MTB23P06VT4

MTB23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high http //onsemi.com speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge 23 AMPERES circuits where d

 5.1. Size:249K  motorola
 mtb23p06vrev1x.pdf pdf_icon

MTB23P06VT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB23P06V/D Designer's Data Sheet MTB23P06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 23 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.120 OHM tance area product abou

 5.2. Size:217K  motorola
 mtb23p06v.pdf pdf_icon

MTB23P06VT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB23P06V/D Designer's Data Sheet MTB23P06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 23 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.120 OHM tance area product abou

 6.1. Size:242K  motorola
 mtb23p06e.pdf pdf_icon

MTB23P06VT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB23P06E/D Designer's Data Sheet MTB23P06E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 23 AMPERES 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.12 OHM than any existing surface mo

MOSTRAR MÁS

Otros transistores... MTB070P15J3, MTB080N15J3, MTB09P03E3, MTB09P04DJ3, MTB110P10L3, MTB160N25J3, MTB20A06Q8, MTB20N04J3, IRFZ44, MTB25C04Q8, MTB2D5N03BH8, MTB2P50ET4G, MTB300N10L3, MTB30P06VT4, MTB30P06VT4G, MTB3D0N03BH8, MTB50P03HDLG