MTB23P06VT4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTB23P06VT4
Código: MTB23P06V
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 90 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 15 V
Corriente continua de drenaje |Id|: 23 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 38 nC
Tiempo de subida (tr): 98.3 nS
Conductancia de drenaje-sustrato (Cd): 380 pF
Resistencia entre drenaje y fuente RDS(on): 0.12 Ohm
Paquete / Cubierta: D2PAK
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MTB23P06VT4 Datasheet (PDF)
mtb23p06vt4.pdf
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MTB23P06VPreferred DevicePower MOSFET23 Amps, 60 VoltsPChannel D2PAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highhttp://onsemi.comspeed switching applications in power supplies, converters and powermotor controls, these devices are particularly well suited for bridge23 AMPEREScircuits where d
mtb23p06vrev1x.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06V/DDesigner's Data SheetMTB23P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.120 OHMtance area product abou
mtb23p06v.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06V/DDesigner's Data SheetMTB23P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.120 OHMtance area product abou
mtb23p06e.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06E/DDesigner's Data SheetMTB23P06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.12 OHMthan any existing surface mo
mtb23p06erev0.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06E/DDesigner's Data SheetMTB23P06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.12 OHMthan any existing surface mo
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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