MTB23P06VT4 datasheet, аналоги, основные параметры

Наименование производителя: MTB23P06VT4  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 90 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 15 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 98.3 ns

Cossⓘ - Выходная емкость: 380 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm

Тип корпуса: D2PAK

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Аналог (замена) для MTB23P06VT4

- подборⓘ MOSFET транзистора по параметрам

 

MTB23P06VT4 даташит

 ..1. Size:97K  onsemi
 mtb23p06vt4.pdf pdf_icon

MTB23P06VT4

MTB23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high http //onsemi.com speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge 23 AMPERES circuits where d

 5.1. Size:249K  motorola
 mtb23p06vrev1x.pdf pdf_icon

MTB23P06VT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB23P06V/D Designer's Data Sheet MTB23P06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 23 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.120 OHM tance area product abou

 5.2. Size:217K  motorola
 mtb23p06v.pdf pdf_icon

MTB23P06VT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB23P06V/D Designer's Data Sheet MTB23P06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 23 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.120 OHM tance area product abou

 6.1. Size:242K  motorola
 mtb23p06e.pdf pdf_icon

MTB23P06VT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB23P06E/D Designer's Data Sheet MTB23P06E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 23 AMPERES 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.12 OHM than any existing surface mo

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