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MTB23P06VT4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTB23P06VT4
   Маркировка: MTB23P06V
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 90 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 15 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 23 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 38 nC
   Время нарастания (tr): 98.3 ns
   Выходная емкость (Cd): 380 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.12 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для MTB23P06VT4

 

 

MTB23P06VT4 Datasheet (PDF)

 ..1. Size:97K  onsemi
 mtb23p06vt4.pdf

MTB23P06VT4 MTB23P06VT4

MTB23P06VPreferred DevicePower MOSFET23 Amps, 60 VoltsPChannel D2PAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highhttp://onsemi.comspeed switching applications in power supplies, converters and powermotor controls, these devices are particularly well suited for bridge23 AMPEREScircuits where d

 5.1. Size:249K  motorola
 mtb23p06vrev1x.pdf

MTB23P06VT4 MTB23P06VT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06V/DDesigner's Data SheetMTB23P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.120 OHMtance area product abou

 5.2. Size:217K  motorola
 mtb23p06v.pdf

MTB23P06VT4 MTB23P06VT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06V/DDesigner's Data SheetMTB23P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.120 OHMtance area product abou

 6.1. Size:242K  motorola
 mtb23p06e.pdf

MTB23P06VT4 MTB23P06VT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06E/DDesigner's Data SheetMTB23P06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.12 OHMthan any existing surface mo

 6.2. Size:280K  motorola
 mtb23p06erev0.pdf

MTB23P06VT4 MTB23P06VT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06E/DDesigner's Data SheetMTB23P06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.12 OHMthan any existing surface mo

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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