MTB23P06VT4 Datasheet. Specs and Replacement

Type Designator: MTB23P06VT4  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 98.3 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: D2PAK

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MTB23P06VT4 substitution

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MTB23P06VT4 datasheet

 ..1. Size:97K  onsemi
 mtb23p06vt4.pdf pdf_icon

MTB23P06VT4

MTB23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high http //onsemi.com speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge 23 AMPERES circuits where d... See More ⇒

 5.1. Size:249K  motorola
 mtb23p06vrev1x.pdf pdf_icon

MTB23P06VT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB23P06V/D Designer's Data Sheet MTB23P06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 23 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.120 OHM tance area product abou... See More ⇒

 5.2. Size:217K  motorola
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MTB23P06VT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB23P06V/D Designer's Data Sheet MTB23P06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 23 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.120 OHM tance area product abou... See More ⇒

 6.1. Size:242K  motorola
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MTB23P06VT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB23P06E/D Designer's Data Sheet MTB23P06E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 23 AMPERES 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.12 OHM than any existing surface mo... See More ⇒

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Detailed specifications: MTB070P15J3, MTB080N15J3, MTB09P03E3, MTB09P04DJ3, MTB110P10L3, MTB160N25J3, MTB20A06Q8, MTB20N04J3, IRFZ44, MTB25C04Q8, MTB2D5N03BH8, MTB2P50ET4G, MTB300N10L3, MTB30P06VT4, MTB30P06VT4G, MTB3D0N03BH8, MTB50P03HDLG

Keywords - MTB23P06VT4 MOSFET specs

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