All MOSFET. MTB23P06VT4 Datasheet

 

MTB23P06VT4 Datasheet and Replacement


   Type Designator: MTB23P06VT4
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 98.3 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: D2PAK
 

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MTB23P06VT4 Datasheet (PDF)

 ..1. Size:97K  onsemi
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MTB23P06VT4

MTB23P06VPreferred DevicePower MOSFET23 Amps, 60 VoltsPChannel D2PAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highhttp://onsemi.comspeed switching applications in power supplies, converters and powermotor controls, these devices are particularly well suited for bridge23 AMPEREScircuits where d

 5.1. Size:249K  motorola
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MTB23P06VT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06V/DDesigner's Data SheetMTB23P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.120 OHMtance area product abou

 5.2. Size:217K  motorola
 mtb23p06v.pdf pdf_icon

MTB23P06VT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06V/DDesigner's Data SheetMTB23P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.120 OHMtance area product abou

 6.1. Size:242K  motorola
 mtb23p06e.pdf pdf_icon

MTB23P06VT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06E/DDesigner's Data SheetMTB23P06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.12 OHMthan any existing surface mo

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Datasheet: MTB070P15J3 , MTB080N15J3 , MTB09P03E3 , MTB09P04DJ3 , MTB110P10L3 , MTB160N25J3 , MTB20A06Q8 , MTB20N04J3 , IRFZ44 , MTB25C04Q8 , MTB2D5N03BH8 , MTB2P50ET4G , MTB300N10L3 , MTB30P06VT4 , MTB30P06VT4G , MTB3D0N03BH8 , MTB50P03HDLG .

History: SRT08N100LD | STB20NM50-1 | TMAN20N50 | SWD2N60DC | NTTFS4C10NTAG | JSM2302 | NP48N055CHE

Keywords - MTB23P06VT4 MOSFET datasheet

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