MTB50P03HDLT4G Todos los transistores

 

MTB50P03HDLT4G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTB50P03HDLT4G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 340 nS
   Cossⓘ - Capacitancia de salida: 1550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: D2PAK
 

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MTB50P03HDLT4G Datasheet (PDF)

 ..1. Size:90K  onsemi
 mtb50p03hdl mtb50p03hdlg mtb50p03hdlt4 mtb50p03hdlt4g.pdf pdf_icon

MTB50P03HDLT4G

MTB50P03HDLPreferred DevicePower MOSFET50 Amps, 30 Volts, Logic LevelP-Channel D2PAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,converters and

 3.1. Size:182K  motorola
 mtb50p03hdlrev2.pdf pdf_icon

MTB50P03HDLT4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50P03HDL/DDesigner's Data SheetMTB50P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate50 AMPERES30 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.025 OHMthan a

 3.2. Size:187K  motorola
 mtb50p03hdl.pdf pdf_icon

MTB50P03HDLT4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50P03HDL/DDesigner's Data SheetMTB50P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate50 AMPERES30 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.025 OHMthan a

 4.1. Size:258K  motorola
 mtb50p03hd.pdf pdf_icon

MTB50P03HDLT4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50P03HDL/DDesigner's Data SheetMTB50P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate50 AMPERES30 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.025 OHMthan a

MOSTRAR MÁS

Otros transistores... MTB2D5N03BH8 , MTB2P50ET4G , MTB300N10L3 , MTB30P06VT4 , MTB30P06VT4G , MTB3D0N03BH8 , MTB50P03HDLG , MTB50P03HDLT4 , 7N65 , MTB5D0P03J3 , MTB5D0P03Q8 , MTB60P15H8 , MTB6D0N03BH8 , MTB75N05HDT4 , MTBA5C10V8 , MTBA6C12Q8 , MTBA6C15J4 .

History: CS5N65U | AUIRFBA1405 | SI6913DQ | SQJ410EP

 

 
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