MTB50P03HDLT4G - аналоги и даташиты транзистора

 

MTB50P03HDLT4G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: MTB50P03HDLT4G
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 340 ns
   Cossⓘ - Выходная емкость: 1550 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
   Тип корпуса: D2PAK
 

 Аналог (замена) для MTB50P03HDLT4G

   - подбор ⓘ MOSFET транзистора по параметрам

 

MTB50P03HDLT4G Datasheet (PDF)

 ..1. Size:90K  onsemi
 mtb50p03hdl mtb50p03hdlg mtb50p03hdlt4 mtb50p03hdlt4g.pdf pdf_icon

MTB50P03HDLT4G

MTB50P03HDLPreferred DevicePower MOSFET50 Amps, 30 Volts, Logic LevelP-Channel D2PAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,converters and

 3.1. Size:182K  motorola
 mtb50p03hdlrev2.pdf pdf_icon

MTB50P03HDLT4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50P03HDL/DDesigner's Data SheetMTB50P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate50 AMPERES30 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.025 OHMthan a

 3.2. Size:187K  motorola
 mtb50p03hdl.pdf pdf_icon

MTB50P03HDLT4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50P03HDL/DDesigner's Data SheetMTB50P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate50 AMPERES30 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.025 OHMthan a

 4.1. Size:258K  motorola
 mtb50p03hd.pdf pdf_icon

MTB50P03HDLT4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50P03HDL/DDesigner's Data SheetMTB50P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate50 AMPERES30 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.025 OHMthan a

ПОКАЗАТЬ ЕЩЁ

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