MTB50P03HDLT4G Datasheet. Specs and Replacement

Type Designator: MTB50P03HDLT4G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 340 nS

Cossⓘ - Output Capacitance: 1550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: D2PAK

  📄📄 Copy 

MTB50P03HDLT4G substitution

- MOSFET ⓘ Cross-Reference Search

 

MTB50P03HDLT4G datasheet

 ..1. Size:90K  onsemi
 mtb50p03hdl mtb50p03hdlg mtb50p03hdlt4 mtb50p03hdlt4g.pdf pdf_icon

MTB50P03HDLT4G

MTB50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and ... See More ⇒

 3.1. Size:182K  motorola
 mtb50p03hdlrev2.pdf pdf_icon

MTB50P03HDLT4G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50P03HDL/D Designer's Data Sheet MTB50P03HDL HDTMOS E-FET. Motorola Preferred Device High Energy Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 50 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.025 OHM than a... See More ⇒

 3.2. Size:187K  motorola
 mtb50p03hdl.pdf pdf_icon

MTB50P03HDLT4G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50P03HDL/D Designer's Data Sheet MTB50P03HDL HDTMOS E-FET. Motorola Preferred Device High Energy Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 50 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.025 OHM than a... See More ⇒

 4.1. Size:258K  motorola
 mtb50p03hd.pdf pdf_icon

MTB50P03HDLT4G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50P03HDL/D Designer's Data Sheet MTB50P03HDL HDTMOS E-FET. Motorola Preferred Device High Energy Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 50 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.025 OHM than a... See More ⇒

SHOW MORE

Detailed specifications: MTB2D5N03BH8, MTB2P50ET4G, MTB300N10L3, MTB30P06VT4, MTB30P06VT4G, MTB3D0N03BH8, MTB50P03HDLG, MTB50P03HDLT4, 10N60, MTB5D0P03J3, MTB5D0P03Q8, MTB60P15H8, MTB6D0N03BH8, MTB75N05HDT4, MTBA5C10V8, MTBA6C12Q8, MTBA6C15J4

Keywords - MTB50P03HDLT4G MOSFET specs

 MTB50P03HDLT4G cross reference

 MTB50P03HDLT4G equivalent finder

 MTB50P03HDLT4G pdf lookup

 MTB50P03HDLT4G substitution

 MTB50P03HDLT4G replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.