MTB6D0N03BH8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MTB6D0N03BH8 Datasheet (PDF)

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Spec. No. : CA00H8 Issued Date : 2015.02.13 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB6D0N03BH8BVDSS 30VID 56ARDS(ON)@VGS=10V, ID=25A 6.4 m(typ) Features RDS(ON)@VGS=4.5V, ID=20A 10.4 m(typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt

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Spec. No. : C709H8 Issued Date : 2014.04.30 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB6D0N03ATH8BVDSS 30VID 56ARDS(ON)@VGS=10V, ID=25A 6.8 m(typ) Features RDS(ON)@VGS=4.5V, ID=20A 10.4 m(typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/d

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Spec. No. : C709V8 Issued Date : 2013.10.23 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB6D0N03ATV8BVDSS 30VID 12.5A6.7m VGS=10V, ID=12A RDSON(TYP) Features 9.7m VGS=4.5V, ID=8A Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating

5.3. Size:425K cystek
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Spec. No. : C709H8 Issued Date : 2014.03.13 CYStech Electronics Corp. Revised Date : 2014.04.30 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB6D0N03AH8BVDSS 30VID 56ARDS(ON)@VGS=10V, ID=25A 6.8 m(typ) Features RDS(ON)@VGS=4.5V, ID=20A 10.4 m(typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Dy

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