All MOSFET. MTB6D0N03BH8 Datasheet

 

MTB6D0N03BH8 Datasheet and Replacement


   Type Designator: MTB6D0N03BH8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 14.8 nC
   tr ⓘ - Rise Time: 14.6 nS
   Cossⓘ - Output Capacitance: 167 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: DFN5X6
 

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MTB6D0N03BH8 Datasheet (PDF)

 ..1. Size:425K  cystek
 mtb6d0n03bh8.pdf pdf_icon

MTB6D0N03BH8

Spec. No. : CA00H8 Issued Date : 2015.02.13 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB6D0N03BH8BVDSS 30VID 56ARDS(ON)@VGS=10V, ID=25A 6.4 m(typ) Features RDS(ON)@VGS=4.5V, ID=20A 10.4 m(typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt

 5.1. Size:424K  cystek
 mtb6d0n03ath8.pdf pdf_icon

MTB6D0N03BH8

Spec. No. : C709H8 Issued Date : 2014.04.30 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB6D0N03ATH8BVDSS 30VID 56ARDS(ON)@VGS=10V, ID=25A 6.8 m(typ) Features RDS(ON)@VGS=4.5V, ID=20A 10.4 m(typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/d

 5.2. Size:361K  cystek
 mtb6d0n03atv8.pdf pdf_icon

MTB6D0N03BH8

Spec. No. : C709V8 Issued Date : 2013.10.23 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB6D0N03ATV8BVDSS 30VID 12.5A6.7m VGS=10V, ID=12A RDSON(TYP) Features 9.7m VGS=4.5V, ID=8A Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating

 5.3. Size:425K  cystek
 mtb6d0n03ah8.pdf pdf_icon

MTB6D0N03BH8

Spec. No. : C709H8 Issued Date : 2014.03.13 CYStech Electronics Corp. Revised Date : 2014.04.30 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB6D0N03AH8BVDSS 30VID 56ARDS(ON)@VGS=10V, ID=25A 6.8 m(typ) Features RDS(ON)@VGS=4.5V, ID=20A 10.4 m(typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Dy

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Datasheet: MTB30P06VT4G , MTB3D0N03BH8 , MTB50P03HDLG , MTB50P03HDLT4 , MTB50P03HDLT4G , MTB5D0P03J3 , MTB5D0P03Q8 , MTB60P15H8 , IRFB4115 , MTB75N05HDT4 , MTBA5C10V8 , MTBA6C12Q8 , MTBA6C15J4 , MTBA6C15Q8 , APM1105NU , APM1106K , APM1110K .

History: IPP037N08N3 | NCEP045N10F

Keywords - MTB6D0N03BH8 MOSFET datasheet

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