MTB75N05HDT4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTB75N05HDT4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 170 nS
Cossⓘ - Capacitancia de salida: 1000 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
Paquete / Cubierta: D2PAK
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MTB75N05HDT4 Datasheet (PDF)
mtb75n05hdt4.pdf

MTB75N05HDPreferred DevicePower MOSFET75 Amps, 50 VoltsN-Channel D2PAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,75 AMPERESconverters and PW
mtb75n05hd.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB75N05HD/DDesigner's Data SheetMTB75N05HDHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FET 75 AMPERESNChannel EnhancementMode Silicon Gate 50 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 9.5 mthan any existing sur
mtb75n05hdrev2x.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB75N05HD/DDesigner's Data SheetMTB75N05HDHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FET 75 AMPERESNChannel EnhancementMode Silicon Gate 50 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 9.5 mthan any existing sur
mtb75n03hdl.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB75N03HDL/DAdvanced InformationMTB75N03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELNChannel EnhancementMode Silicon Gate75 AMPERES25 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 9 mOHMthan any exis
Otros transistores... MTB3D0N03BH8 , MTB50P03HDLG , MTB50P03HDLT4 , MTB50P03HDLT4G , MTB5D0P03J3 , MTB5D0P03Q8 , MTB60P15H8 , MTB6D0N03BH8 , 2SK3878 , MTBA5C10V8 , MTBA6C12Q8 , MTBA6C15J4 , MTBA6C15Q8 , APM1105NU , APM1106K , APM1110K , APM1110NU .
History: FDB86135 | APT20M34BLL | CS10N60P | FQPF10N60CT | R6035KNZ1 | ALD1106SBL | CS8N50A8R
History: FDB86135 | APT20M34BLL | CS10N60P | FQPF10N60CT | R6035KNZ1 | ALD1106SBL | CS8N50A8R



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