MTB75N05HDT4 Todos los transistores

MTB75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, 75 AMPERES converters and PW

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N05HD/D Designer's Data Sheet MTB75N05HD HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 75 AMPERES N Channel Enhancement Mode Silicon Gate 50 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 9.5 m than any existing sur

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N05HD/D Designer's Data Sheet MTB75N05HD HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 75 AMPERES N Channel Enhancement Mode Silicon Gate 50 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 9.5 m than any existing sur

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N03HDL/D Advanced Information MTB75N03HDL HDTMOS E-FET. Motorola Preferred Device High Density Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL N Channel Enhancement Mode Silicon Gate 75 AMPERES 25 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 9 mOHM than any exis

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N06HD/D Designer's Data Sheet MTB75N06HD HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 75 AMPERES N Channel Enhancement Mode Silicon Gate 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 10 mOHM than any existing surf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N03HDL/D Advanced Information MTB75N03HDL HDTMOS E-FET. Motorola Preferred Device High Density Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL N Channel Enhancement Mode Silicon Gate 75 AMPERES 25 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 9 mOHM than any exis

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N06HD/D Designer's Data Sheet MTB75N06HD HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 75 AMPERES N Channel Enhancement Mode Silicon Gate 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 10 mOHM than any existing surf