MTB75N05HDT4 datasheet, аналоги, основные параметры

Наименование производителя: MTB75N05HDT4  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 125 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 50 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 170 ns

Cossⓘ - Выходная емкость: 1000 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0095 Ohm

Тип корпуса: D2PAK

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Аналог (замена) для MTB75N05HDT4

- подборⓘ MOSFET транзистора по параметрам

 

MTB75N05HDT4 даташит

 ..1. Size:240K  onsemi
 mtb75n05hdt4.pdf pdf_icon

MTB75N05HDT4

MTB75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, 75 AMPERES converters and PW

 4.1. Size:218K  motorola
 mtb75n05hd.pdf pdf_icon

MTB75N05HDT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N05HD/D Designer's Data Sheet MTB75N05HD HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 75 AMPERES N Channel Enhancement Mode Silicon Gate 50 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 9.5 m than any existing sur

 4.2. Size:254K  motorola
 mtb75n05hdrev2x.pdf pdf_icon

MTB75N05HDT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N05HD/D Designer's Data Sheet MTB75N05HD HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 75 AMPERES N Channel Enhancement Mode Silicon Gate 50 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 9.5 m than any existing sur

 7.1. Size:265K  motorola
 mtb75n03hdl.pdf pdf_icon

MTB75N05HDT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N03HDL/D Advanced Information MTB75N03HDL HDTMOS E-FET. Motorola Preferred Device High Density Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL N Channel Enhancement Mode Silicon Gate 75 AMPERES 25 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 9 mOHM than any exis

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