MTB75N05HDT4 - Даташиты. Аналоги. Основные параметры
Наименование производителя: MTB75N05HDT4
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 170 ns
Cossⓘ - Выходная емкость: 1000 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0095 Ohm
Тип корпуса: D2PAK
Аналог (замена) для MTB75N05HDT4
MTB75N05HDT4 Datasheet (PDF)
mtb75n05hdt4.pdf
MTB75N05HDPreferred DevicePower MOSFET75 Amps, 50 VoltsN-Channel D2PAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,75 AMPERESconverters and PW
mtb75n05hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB75N05HD/DDesigner's Data SheetMTB75N05HDHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FET 75 AMPERESNChannel EnhancementMode Silicon Gate 50 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 9.5 mthan any existing sur
mtb75n05hdrev2x.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB75N05HD/DDesigner's Data SheetMTB75N05HDHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FET 75 AMPERESNChannel EnhancementMode Silicon Gate 50 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 9.5 mthan any existing sur
mtb75n03hdl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB75N03HDL/DAdvanced InformationMTB75N03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELNChannel EnhancementMode Silicon Gate75 AMPERES25 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 9 mOHMthan any exis
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History: IXTP60N20T | IRFPG50PBF | WCM2068 | AOD600A70R | STU6N95K5 | IXTH12N45A
Список транзисторов
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