All MOSFET. MTB75N05HDT4 Datasheet

 

MTB75N05HDT4 Datasheet and Replacement


   Type Designator: MTB75N05HDT4
   Marking Code: MTB75N05HD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 71 nC
   tr ⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: D2PAK
 

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MTB75N05HDT4 Datasheet (PDF)

 ..1. Size:240K  onsemi
 mtb75n05hdt4.pdf pdf_icon

MTB75N05HDT4

MTB75N05HDPreferred DevicePower MOSFET75 Amps, 50 VoltsN-Channel D2PAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,75 AMPERESconverters and PW

 4.1. Size:218K  motorola
 mtb75n05hd.pdf pdf_icon

MTB75N05HDT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB75N05HD/DDesigner's Data SheetMTB75N05HDHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FET 75 AMPERESNChannel EnhancementMode Silicon Gate 50 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 9.5 mthan any existing sur

 4.2. Size:254K  motorola
 mtb75n05hdrev2x.pdf pdf_icon

MTB75N05HDT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB75N05HD/DDesigner's Data SheetMTB75N05HDHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FET 75 AMPERESNChannel EnhancementMode Silicon Gate 50 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 9.5 mthan any existing sur

 7.1. Size:265K  motorola
 mtb75n03hdl.pdf pdf_icon

MTB75N05HDT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB75N03HDL/DAdvanced InformationMTB75N03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELNChannel EnhancementMode Silicon Gate75 AMPERES25 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 9 mOHMthan any exis

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Datasheet: MTB3D0N03BH8 , MTB50P03HDLG , MTB50P03HDLT4 , MTB50P03HDLT4G , MTB5D0P03J3 , MTB5D0P03Q8 , MTB60P15H8 , MTB6D0N03BH8 , 2SK3878 , MTBA5C10V8 , MTBA6C12Q8 , MTBA6C15J4 , MTBA6C15Q8 , APM1105NU , APM1106K , APM1110K , APM1110NU .

History: RU30L40M3 | WMS119N10LG2 | SI7374DP | NCE3050I

Keywords - MTB75N05HDT4 MOSFET datasheet

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