MTB75N05HDT4 MOSFET. Datasheet pdf. Equivalent

   Type Designator: MTB75N05HDT4
   Marking Code: MTB75N05HD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 71 nC
   trⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: D2PAK

MTB75N05HDT4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MTB75N05HDT4 Datasheet (PDF)

..1. Size:240K onsemi
mtb75n05hdt4.pdf

MTB75N05HDPreferred DevicePower MOSFET75 Amps, 50 VoltsN-Channel D2PAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,75 AMPERESconverters and PW

4.1. Size:218K motorola
mtb75n05hd.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB75N05HD/DDesigner's Data SheetMTB75N05HDHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FET 75 AMPERESNChannel EnhancementMode Silicon Gate 50 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 9.5 mthan any existing sur

4.2. Size:254K motorola
mtb75n05hdrev2x.pdf

7.1. Size:265K motorola
mtb75n03hdl.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB75N03HDL/DAdvanced InformationMTB75N03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELNChannel EnhancementMode Silicon Gate75 AMPERES25 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 9 mOHMthan any exis

7.2. Size:342K motorola
mtb75n06hdrev1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB75N06HD/DDesigner's Data SheetMTB75N06HDHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FET 75 AMPERESNChannel EnhancementMode Silicon Gate 60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 10 mOHMthan any existing surf

7.3. Size:304K motorola
mtb75n03hd.pdf