MTB75N05HDT4 Datasheet. Specs and Replacement

Type Designator: MTB75N05HDT4  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 1000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: D2PAK

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MTB75N05HDT4 substitution

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MTB75N05HDT4 datasheet

 ..1. Size:240K  onsemi
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MTB75N05HDT4

MTB75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, 75 AMPERES converters and PW... See More ⇒

 4.1. Size:218K  motorola
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MTB75N05HDT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N05HD/D Designer's Data Sheet MTB75N05HD HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 75 AMPERES N Channel Enhancement Mode Silicon Gate 50 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 9.5 m than any existing sur... See More ⇒

 4.2. Size:254K  motorola
mtb75n05hdrev2x.pdf pdf_icon

MTB75N05HDT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N05HD/D Designer's Data Sheet MTB75N05HD HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 75 AMPERES N Channel Enhancement Mode Silicon Gate 50 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 9.5 m than any existing sur... See More ⇒

 7.1. Size:265K  motorola
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MTB75N05HDT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N03HDL/D Advanced Information MTB75N03HDL HDTMOS E-FET. Motorola Preferred Device High Density Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL N Channel Enhancement Mode Silicon Gate 75 AMPERES 25 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 9 mOHM than any exis... See More ⇒

Detailed specifications: MTB3D0N03BH8, MTB50P03HDLG, MTB50P03HDLT4, MTB50P03HDLT4G, MTB5D0P03J3, MTB5D0P03Q8, MTB60P15H8, MTB6D0N03BH8, 8205A, MTBA5C10V8, MTBA6C12Q8, MTBA6C15J4, MTBA6C15Q8, APM1105NU, APM1106K, APM1110K, APM1110NU

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