APQ02SN60AA Todos los transistores

 

APQ02SN60AA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APQ02SN60AA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.6 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.4 Ohm
   Paquete / Cubierta: TO-251
 

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APQ02SN60AA Datasheet (PDF)

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APQ02SN60AA

DEVICE SPECIFICATION APQ02SN60AAAPQ02SN60AB600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8(typ)VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

 4.1. Size:545K  alpha pacific
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APQ02SN60AA

DEVICE SPECIFICATION apQ02SN60A(F)600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2ARDS(on) =3.8(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

 4.2. Size:701K  alpha pacific
 apq02sn60ab.pdf pdf_icon

APQ02SN60AA

DEVICE SPECIFICATION APQ02SN60AAAPQ02SN60AB600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8(typ)VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

 4.3. Size:738K  alpha pacific
 apq02sn60af apq02sn60ah.pdf pdf_icon

APQ02SN60AA

DEVICE SPECIFICATION APQ02SN60AH APQ02SN60AF 600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8(typ)VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

MOSTRAR MÁS

Otros transistores... APM4927K , APM6010K , APM6055NU , APM8010K , APM9988QG , APQ01SN60AA , APQ01SN60AB , APQ02SN60A , IRF530 , APQ02SN60AB , APQ02SN60AF , APQ02SN60AH , APQ02SN65AA , APQ02SN65AB , APQ02SN65AF , APQ02SN65AH , APQ03SN60AB .

History: FQA13N80-F109

 

 
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