APQ02SN60AA Datasheet. Specs and Replacement

Type Designator: APQ02SN60AA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.6 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm

Package: TO-251

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APQ02SN60AA substitution

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APQ02SN60AA datasheet

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APQ02SN60AA

DEVICE SPECIFICATION APQ02SN60AA APQ02SN60AB 600V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8 (typ) VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi... See More ⇒

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APQ02SN60AA

DEVICE SPECIFICATION apQ02SN60A(F) 600V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A RDS(on) =3.8 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st... See More ⇒

 4.2. Size:701K  alpha pacific
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APQ02SN60AA

DEVICE SPECIFICATION APQ02SN60AA APQ02SN60AB 600V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8 (typ) VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi... See More ⇒

 4.3. Size:738K  alpha pacific
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APQ02SN60AA

DEVICE SPECIFICATION APQ02SN60AH APQ02SN60AF 600V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8 (typ) VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to ... See More ⇒

Detailed specifications: APM4927K, APM6010K, APM6055NU, APM8010K, APM9988QG, APQ01SN60AA, APQ01SN60AB, APQ02SN60A, IRF1010E, APQ02SN60AB, APQ02SN60AF, APQ02SN60AH, APQ02SN65AA, APQ02SN65AB, APQ02SN65AF, APQ02SN65AH, APQ03SN60AB

Keywords - APQ02SN60AA MOSFET specs

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