Справочник MOSFET. APQ02SN60AA

 

APQ02SN60AA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APQ02SN60AA
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 42 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 5.6 ns
   Cossⓘ - Выходная емкость: 45 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 4.4 Ohm
   Тип корпуса: TO-251
 

 Аналог (замена) для APQ02SN60AA

   - подбор ⓘ MOSFET транзистора по параметрам

 

APQ02SN60AA Datasheet (PDF)

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APQ02SN60AA

DEVICE SPECIFICATION APQ02SN60AAAPQ02SN60AB600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8(typ)VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

 4.1. Size:545K  alpha pacific
 apq02sn60a.pdf pdf_icon

APQ02SN60AA

DEVICE SPECIFICATION apQ02SN60A(F)600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2ARDS(on) =3.8(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

 4.2. Size:701K  alpha pacific
 apq02sn60ab.pdf pdf_icon

APQ02SN60AA

DEVICE SPECIFICATION APQ02SN60AAAPQ02SN60AB600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8(typ)VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

 4.3. Size:738K  alpha pacific
 apq02sn60af apq02sn60ah.pdf pdf_icon

APQ02SN60AA

DEVICE SPECIFICATION APQ02SN60AH APQ02SN60AF 600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8(typ)VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... APM4927K , APM6010K , APM6055NU , APM8010K , APM9988QG , APQ01SN60AA , APQ01SN60AB , APQ02SN60A , IRF530 , APQ02SN60AB , APQ02SN60AF , APQ02SN60AH , APQ02SN65AA , APQ02SN65AB , APQ02SN65AF , APQ02SN65AH , APQ03SN60AB .

History: R6020FNJ | IPA037N08N3 | MSU1N60T

 

 
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