APQ02SN65AH Todos los transistores

 

APQ02SN65AH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APQ02SN65AH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 106 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
   Paquete / Cubierta: TO-220
 

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APQ02SN65AH Datasheet (PDF)

 4.1. Size:398K  alpha pacific
 apq02sn65aa.pdf pdf_icon

APQ02SN65AH

DEVICE SPECIFICATION APQ02SN65AA APQ02SN65AB 650V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 650V / 2A effect transistors are produced using planar stripe, RDS(on) =4.0(typ) VGS =10V, ID =1A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to m

 4.2. Size:398K  alpha pacific
 apq02sn65ab.pdf pdf_icon

APQ02SN65AH

DEVICE SPECIFICATION APQ02SN65AA APQ02SN65AB 650V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 650V / 2A effect transistors are produced using planar stripe, RDS(on) =4.0(typ) VGS =10V, ID =1A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to m

 6.1. Size:545K  alpha pacific
 apq02sn60a.pdf pdf_icon

APQ02SN65AH

DEVICE SPECIFICATION apQ02SN60A(F)600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2ARDS(on) =3.8(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

 6.2. Size:701K  alpha pacific
 apq02sn60ab.pdf pdf_icon

APQ02SN65AH

DEVICE SPECIFICATION APQ02SN60AAAPQ02SN60AB600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8(typ)VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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