APQ02SN65AH MOSFET Datasheet: N-Ch, 650V, 4.5A. Full specification with pinout and replacement list

APQ02SN65AH Specs and Replacement

Type Designator: APQ02SN65AH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 106 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO-220

APQ02SN65AH substitution

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APQ02SN65AH datasheet

4.1. Size:398K alpha pacific
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DEVICE SPECIFICATION APQ02SN65AA APQ02SN65AB 650V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 650V / 2A effect transistors are produced using planar stripe, RDS(on) =4.0 (typ) VGS =10V, ID =1A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to m... See More ⇒

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DEVICE SPECIFICATION apQ02SN60A(F) 600V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A RDS(on) =3.8 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st... See More ⇒

6.2. Size:701K alpha pacific
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DEVICE SPECIFICATION APQ02SN60AA APQ02SN60AB 600V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8 (typ) VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi... See More ⇒