APQ02SN65AH - описание и поиск аналогов

 

APQ02SN65AH. Аналоги и основные параметры

Наименование производителя: APQ02SN65AH

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 106 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 42 ns

Cossⓘ - Выходная емкость: 50 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.8 Ohm

Тип корпуса: TO-220

Аналог (замена) для APQ02SN65AH

- подборⓘ MOSFET транзистора по параметрам

 

APQ02SN65AH даташит

 4.1. Size:398K  alpha pacific
 apq02sn65aa.pdf pdf_icon

APQ02SN65AH

DEVICE SPECIFICATION APQ02SN65AA APQ02SN65AB 650V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 650V / 2A effect transistors are produced using planar stripe, RDS(on) =4.0 (typ) VGS =10V, ID =1A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to m

 4.2. Size:398K  alpha pacific
 apq02sn65ab.pdf pdf_icon

APQ02SN65AH

DEVICE SPECIFICATION APQ02SN65AA APQ02SN65AB 650V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 650V / 2A effect transistors are produced using planar stripe, RDS(on) =4.0 (typ) VGS =10V, ID =1A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to m

 6.1. Size:545K  alpha pacific
 apq02sn60a.pdf pdf_icon

APQ02SN65AH

DEVICE SPECIFICATION apQ02SN60A(F) 600V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A RDS(on) =3.8 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

 6.2. Size:701K  alpha pacific
 apq02sn60ab.pdf pdf_icon

APQ02SN65AH

DEVICE SPECIFICATION APQ02SN60AA APQ02SN60AB 600V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8 (typ) VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... APQ02SN60A , APQ02SN60AA , APQ02SN60AB , APQ02SN60AF , APQ02SN60AH , APQ02SN65AA , APQ02SN65AB , APQ02SN65AF , STP80NF70 , APQ03SN60AB , APQ03SN80A , APQ03SN80AF , APQ03SN80CB , APQ03SN80CF , APQ03SN80CH , APQ04SN60A , APQ04SN60AF .

History: DH019N04I | OSG55R074HSZF | 2SK1165 | APQ03SN60AB | AOCA33103E | SLD60R650S2 | SLD65R420S2

 

 

 

 

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