APQ04SN60CA Todos los transistores

 

APQ04SN60CA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APQ04SN60CA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 36 nS

Conductancia de drenaje-sustrato (Cd): 67 pF

Resistencia drenaje-fuente RDS(on): 2.3 Ohm

Empaquetado / Estuche: TO-251

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APQ04SN60CA Datasheet (PDF)

1.1. apq04sn60a apq04sn60af.pdf Size:461K _upd-mosfet

APQ04SN60CA
APQ04SN60CA

DEVICE SPECIFICATION apQ04SN60A(F) 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power • 600V / 4A ,RDS(on) = 1.72Ω(typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =2A stripe, DMOS technology. • Fast switching This advanced technology has been especially • 100% avalanche tested tailored to minimize

1.2. apq04sn60ca apq04sn60cb.pdf Size:703K _upd-mosfet

APQ04SN60CA
APQ04SN60CA

DEVICE SPECIFICATION APQ04SN60CA APQ04SN60CB 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power • 600V / 4A field effect transistors are produced using planar • RDS(on) = 1.9Ω(typ), VGS = 10 V ,ID =2.4A stripe, DMOS technology. • Fast switching This advanced technology has been especially • 100% avalanche tested tailored

 1.3. apq04sn60ce.pdf Size:489K _upd-mosfet

APQ04SN60CA
APQ04SN60CA

DEVICE SPECIFICATION APQ04SN60CE 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power  600V / 4A field effect transistors are produced using planar  RDS(on) = 1.9Ω(typ)、VGS = 10 V ,ID =2.4A stripe, DMOS technology.  Fast switching This advanced technology has been especially  100% avalanche tested tailored to minimize on-

1.4. apq04sn60cf apq04sn60ch.pdf Size:765K _upd-mosfet

APQ04SN60CA
APQ04SN60CA

DEVICE SPECIFICATION APQ04SN60CH APQ04SN60CF 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power • 600V / 4A field effect transistors are produced using planar • RDS(on) = 1.9Ω(typ),VGS = 10 V ,ID =2.4A stripe, DMOS technology. • Fast switching This advanced technology has been especially • 100% avalanche tested tailored

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