Справочник MOSFET. APQ04SN60CA

 

APQ04SN60CA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APQ04SN60CA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 16 nC
   trⓘ - Время нарастания: 36 ns
   Cossⓘ - Выходная емкость: 67 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.3 Ohm
   Тип корпуса: TO-251

 Аналог (замена) для APQ04SN60CA

 

 

APQ04SN60CA Datasheet (PDF)

 ..1. Size:703K  alpha pacific
 apq04sn60ca apq04sn60cb.pdf

APQ04SN60CA APQ04SN60CA

DEVICE SPECIFICATION APQ04SN60CA APQ04SN60CB 600V/4A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9(typ) VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored

 4.1. Size:765K  alpha pacific
 apq04sn60cf apq04sn60ch.pdf

APQ04SN60CA APQ04SN60CA

DEVICE SPECIFICATION APQ04SN60CH APQ04SN60CF 600V/4A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9(typ)VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored

 4.2. Size:489K  alpha pacific
 apq04sn60ce.pdf

APQ04SN60CA APQ04SN60CA

DEVICE SPECIFICATION APQ04SN60CE600V/4A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9(typ)VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-

 5.1. Size:461K  alpha pacific
 apq04sn60a apq04sn60af.pdf

APQ04SN60CA APQ04SN60CA

DEVICE SPECIFICATION apQ04SN60A(F)600V/4A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 4A RDS(on) = 1.72(typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize

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