All MOSFET. APQ04SN60CA Datasheet

 

APQ04SN60CA MOSFET. Datasheet pdf. Equivalent

Type Designator: APQ04SN60CA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 36 nS

Drain-Source Capacitance (Cd): 67 pF

Maximum Drain-Source On-State Resistance (Rds): 2.3 Ohm

Package: TO-251

APQ04SN60CA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APQ04SN60CA Datasheet (PDF)

1.1. apq04sn60a apq04sn60af.pdf Size:461K _upd-mosfet

APQ04SN60CA
APQ04SN60CA

DEVICE SPECIFICATION apQ04SN60A(F) 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power • 600V / 4A ,RDS(on) = 1.72Ω(typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =2A stripe, DMOS technology. • Fast switching This advanced technology has been especially • 100% avalanche tested tailored to minimize

1.2. apq04sn60ca apq04sn60cb.pdf Size:703K _upd-mosfet

APQ04SN60CA
APQ04SN60CA

DEVICE SPECIFICATION APQ04SN60CA APQ04SN60CB 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power • 600V / 4A field effect transistors are produced using planar • RDS(on) = 1.9Ω(typ), VGS = 10 V ,ID =2.4A stripe, DMOS technology. • Fast switching This advanced technology has been especially • 100% avalanche tested tailored

 1.3. apq04sn60ce.pdf Size:489K _upd-mosfet

APQ04SN60CA
APQ04SN60CA

DEVICE SPECIFICATION APQ04SN60CE 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power  600V / 4A field effect transistors are produced using planar  RDS(on) = 1.9Ω(typ)、VGS = 10 V ,ID =2.4A stripe, DMOS technology.  Fast switching This advanced technology has been especially  100% avalanche tested tailored to minimize on-

1.4. apq04sn60cf apq04sn60ch.pdf Size:765K _upd-mosfet

APQ04SN60CA
APQ04SN60CA

DEVICE SPECIFICATION APQ04SN60CH APQ04SN60CF 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power • 600V / 4A field effect transistors are produced using planar • RDS(on) = 1.9Ω(typ),VGS = 10 V ,ID =2.4A stripe, DMOS technology. • Fast switching This advanced technology has been especially • 100% avalanche tested tailored

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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