APQ04SN60CA Datasheet and Replacement. Cross Reference Search

APQ04SN60CA Datasheet (PDF)

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DEVICE SPECIFICATION APQ04SN60CA APQ04SN60CB 600V/4A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9(typ) VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored

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DEVICE SPECIFICATION APQ04SN60CH APQ04SN60CF 600V/4A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9(typ)VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored

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DEVICE SPECIFICATION APQ04SN60CE600V/4A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9(typ)VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-

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DEVICE SPECIFICATION apQ04SN60A(F)600V/4A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 4A RDS(on) = 1.72(typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize

Datasheet: APQ03SN60AB , APQ03SN80A , APQ03SN80AF , APQ03SN80CB , APQ03SN80CF , APQ03SN80CH , APQ04SN60A , APQ04SN60AF , STP80NF70 , APQ04SN60CB , APQ04SN60CE , APQ04SN60CF , APQ04SN60CH , APQ05SN60A , APQ05SN60AF , APQ06SN60A , APQ06SN60AF .