APQ07SN60AF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APQ07SN60AF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 48 nS

Cossⓘ - Capacitancia de salida: 115 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm

Encapsulados: TO-220F

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APQ07SN60AF datasheet

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APQ07SN60AF

DEVICE SPECIFICATION APQ07SN60AH APQ07SN60AF 600V/7A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 7A effect transistors are produced using planar stripe, RDS(on) =0.9 (typ.) VGS =10V, ID =3.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored t

 4.1. Size:663K  alpha pacific
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APQ07SN60AF

DEVICE SPECIFICATION APQ07SN60AH APQ07SN60AF 600V/7A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 7A effect transistors are produced using planar stripe, RDS(on) =0.9 (typ.) VGS =10V, ID =3.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored t

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APQ07SN60AF

DEVICE SPECIFICATION APQ07SN65AH APQ07SN65AF 650V/7A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 650V / 7A field effect transistors are produced using planar RDS(on) = 1.0 (typ) VGS = 10 V ,ID =3.45A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo

 6.2. Size:745K  alpha pacific
 apq07sn65af.pdf pdf_icon

APQ07SN60AF

DEVICE SPECIFICATION APQ07SN65AH APQ07SN65AF 650V/7A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 650V / 7A field effect transistors are produced using planar RDS(on) = 1.0 (typ) VGS = 10 V ,ID =3.45A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo

MOSTRAR MÁS

Otros transistores... APQ04SN60CH, APQ05SN60A, APQ05SN60AF, APQ06SN60A, APQ06SN60AF, APQ06SN60AH, APQ06SN65AF, APQ06SN65AH, SKD502T, APQ07SN60AH, APQ07SN65AF, APQ07SN65AH, APQ07SN80BF, APQ07SN80BH, APQ08SN50B, APQ08SN50BE, APQ08SN50BF