APQ07SN60AF PDF and Equivalents Search

 

APQ07SN60AF Specs and Replacement

Type Designator: APQ07SN60AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO-220F

APQ07SN60AF substitution

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APQ07SN60AF datasheet

 ..1. Size:663K  alpha pacific
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APQ07SN60AF

DEVICE SPECIFICATION APQ07SN60AH APQ07SN60AF 600V/7A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 7A effect transistors are produced using planar stripe, RDS(on) =0.9 (typ.) VGS =10V, ID =3.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored t... See More ⇒

 4.1. Size:663K  alpha pacific
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APQ07SN60AF

DEVICE SPECIFICATION APQ07SN60AH APQ07SN60AF 600V/7A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 7A effect transistors are produced using planar stripe, RDS(on) =0.9 (typ.) VGS =10V, ID =3.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored t... See More ⇒

 6.1. Size:745K  alpha pacific
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APQ07SN60AF

DEVICE SPECIFICATION APQ07SN65AH APQ07SN65AF 650V/7A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 650V / 7A field effect transistors are produced using planar RDS(on) = 1.0 (typ) VGS = 10 V ,ID =3.45A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo... See More ⇒

 6.2. Size:745K  alpha pacific
 apq07sn65af.pdf pdf_icon

APQ07SN60AF

DEVICE SPECIFICATION APQ07SN65AH APQ07SN65AF 650V/7A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 650V / 7A field effect transistors are produced using planar RDS(on) = 1.0 (typ) VGS = 10 V ,ID =3.45A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo... See More ⇒

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Detailed specifications: APQ04SN60CH, APQ05SN60A, APQ05SN60AF, APQ06SN60A, APQ06SN60AF, APQ06SN60AH, APQ06SN65AF, APQ06SN65AH, 8N60, APQ07SN60AH, APQ07SN65AF, APQ07SN65AH, APQ07SN80BF, APQ07SN80BH, APQ08SN50B, APQ08SN50BE, APQ08SN50BF

Keywords - APQ07SN60AF MOSFET specs

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