APQ07SN60AH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APQ07SN60AH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 152 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 31.3 nC
Tiempo de subida (tr): 48 nS
Conductancia de drenaje-sustrato (Cd): 115 pF
Resistencia entre drenaje y fuente RDS(on): 1.1 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET APQ07SN60AH
APQ07SN60AH Datasheet (PDF)
apq07sn60ah.pdf
DEVICE SPECIFICATION APQ07SN60AH APQ07SN60AF 600V/7A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 7A effect transistors are produced using planar stripe, RDS(on) =0.9 (typ.)VGS =10V, ID =3.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored t
apq07sn60af.pdf
DEVICE SPECIFICATION APQ07SN60AH APQ07SN60AF 600V/7A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 7A effect transistors are produced using planar stripe, RDS(on) =0.9 (typ.)VGS =10V, ID =3.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored t
apq07sn65ah.pdf
DEVICE SPECIFICATION APQ07SN65AH APQ07SN65AF 650V/7A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 7A field effect transistors are produced using planar RDS(on) = 1.0(typ)VGS = 10 V ,ID =3.45A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo
apq07sn65af.pdf
DEVICE SPECIFICATION APQ07SN65AH APQ07SN65AF 650V/7A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 7A field effect transistors are produced using planar RDS(on) = 1.0(typ)VGS = 10 V ,ID =3.45A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo
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