All MOSFET. APQ07SN60AH Datasheet

 

APQ07SN60AH MOSFET. Datasheet pdf. Equivalent


   Type Designator: APQ07SN60AH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 152 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31.3 nC
   trⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO-220

 APQ07SN60AH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APQ07SN60AH Datasheet (PDF)

 ..1. Size:663K  alpha pacific
 apq07sn60ah.pdf

APQ07SN60AH APQ07SN60AH

DEVICE SPECIFICATION APQ07SN60AH APQ07SN60AF 600V/7A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 7A effect transistors are produced using planar stripe, RDS(on) =0.9 (typ.)VGS =10V, ID =3.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored t

 4.1. Size:663K  alpha pacific
 apq07sn60af.pdf

APQ07SN60AH APQ07SN60AH

DEVICE SPECIFICATION APQ07SN60AH APQ07SN60AF 600V/7A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 7A effect transistors are produced using planar stripe, RDS(on) =0.9 (typ.)VGS =10V, ID =3.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored t

 6.1. Size:745K  alpha pacific
 apq07sn65ah.pdf

APQ07SN60AH APQ07SN60AH

DEVICE SPECIFICATION APQ07SN65AH APQ07SN65AF 650V/7A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 7A field effect transistors are produced using planar RDS(on) = 1.0(typ)VGS = 10 V ,ID =3.45A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo

 6.2. Size:745K  alpha pacific
 apq07sn65af.pdf

APQ07SN60AH APQ07SN60AH

DEVICE SPECIFICATION APQ07SN65AH APQ07SN65AF 650V/7A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 7A field effect transistors are produced using planar RDS(on) = 1.0(typ)VGS = 10 V ,ID =3.45A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo

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