APQ07SN60AH MOSFET Datasheet: N-Ch, 600V, 7A. Full specification with pinout and replacement list

APQ07SN60AH Specs and Replacement

Type Designator: APQ07SN60AH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 152 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO-220

APQ07SN60AH substitution

- MOSFET ⓘ Cross-Reference Search

APQ07SN60AH datasheet

..1. Size:663K alpha pacific
apq07sn60ah.pdf pdf_icon

DEVICE SPECIFICATION APQ07SN60AH APQ07SN60AF 600V/7A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 7A effect transistors are produced using planar stripe, RDS(on) =0.9 (typ.) VGS =10V, ID =3.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored t... See More ⇒

4.1. Size:663K alpha pacific
apq07sn60af.pdf pdf_icon

6.1. Size:745K alpha pacific
apq07sn65ah.pdf pdf_icon

DEVICE SPECIFICATION APQ07SN65AH APQ07SN65AF 650V/7A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 650V / 7A field effect transistors are produced using planar RDS(on) = 1.0 (typ) VGS = 10 V ,ID =3.45A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo... See More ⇒

6.2. Size:745K alpha pacific
apq07sn65af.pdf pdf_icon