APQ08SN50BE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APQ08SN50BE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 134 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 310 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
Paquete / Cubierta: TO-263
APQ08SN50BE Datasheet (PDF)
apq08sn50be.pdf

DEVICE SPECIFICATION APQ08SN50BE 500V/8A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 8A , effect transistors are produced using planar stripe, RDS(on) =0.72(typ) VGS =10V, ID =4.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o
apq08sn50b.pdf

DEVICE SPECIFICATION apQ08SN50B(F)500V/8A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 8A , RDS(on) =0.72(typ)@ effect transistors are produced using planar stripe, VGS =10V, ID =4.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on
apq08sn50bf apq08sn50bh.pdf

DEVICE SPECIFICATION APQ08SN50BH APQ08SN50BF 500V/8A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 8A effect transistors are produced using planar stripe, RDS(on) =0.72(typ) VGS =10V, ID =4.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored t
Otros transistores... APQ06SN65AH , APQ07SN60AF , APQ07SN60AH , APQ07SN65AF , APQ07SN65AH , APQ07SN80BF , APQ07SN80BH , APQ08SN50B , MMIS60R580P , APQ08SN50BF , APQ08SN50BH , APQ09SN50A , APQ09SN50AF , APQ09SN90AD , APQ0CSN60A , APQ0CSN60AJ , APQ0DSN60AJ .



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