APQ08SN50BE MOSFET Datasheet: N-Ch, 500V, 8A. Full specification with pinout and replacement list

APQ08SN50BE Specs and Replacement

Type Designator: APQ08SN50BE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 134 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 310 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-263

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APQ08SN50BE datasheet

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DEVICE SPECIFICATION APQ08SN50BE 500V/8A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 8A , effect transistors are produced using planar stripe, RDS(on) =0.72 (typ) VGS =10V, ID =4.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o... See More ⇒

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DEVICE SPECIFICATION apQ08SN50B(F) 500V/8A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 8A , RDS(on) =0.72 (typ)@ effect transistors are produced using planar stripe, VGS =10V, ID =4.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on... See More ⇒

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DEVICE SPECIFICATION APQ08SN50BH APQ08SN50BF 500V/8A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 8A effect transistors are produced using planar stripe, RDS(on) =0.72 (typ) VGS =10V, ID =4.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored t... See More ⇒

Detailed specifications: APQ06SN65AH , APQ07SN60AF , APQ07SN60AH , APQ07SN65AF , APQ07SN65AH , APQ07SN80BF , APQ07SN80BH , APQ08SN50B , 7N60 , APQ08SN50BF , APQ08SN50BH , APQ09SN50A , APQ09SN50AF , APQ09SN90AD , APQ0CSN60A , APQ0CSN60AJ , APQ0DSN60AJ .